Grat-FET™
Grat-FETTM: Graphene Field-Effect Transistors.
Bluestone’s Grat-FETTM products are state-of-the-art, three-terminal Field-Effect Transistors (FETs) that rely on Bluestone’s exclusive, high-mobility CVD graphene, Grat-MTM. Each Grat-FETTM chip consists of an array of 36 graphene FETs with nine different graphene channel length/width arrangements to accommodate all research and development settings.
Graphene FETs are fabricated on a Si wafer covered with a SiO2 layer, and the high-mobility Grat-MTM graphene is used as the transistor channel. The graphene transistor consists of three terminals: source and drain metal electrodes contacting the graphene channel and a global back gate enabled by the doped Si substrate. These features facilitate the characteristic ambipolar transport behavior of graphene in the Grat-FETs – achieving both n-type and p-type transport when biased with a proper gate voltage at the substrate.
As with all Bluestone products, every Grat-FET is tested to ensure our high-quality standards are met.
Features & Benefits
- High field-effect carrier mobility of 2000 cm2/Vs or more
- Ambipolar transport
- Uncovered graphene channel
- Small uncontrolled doping
- Fabricated on highly-doped Si substrate, which can be used as gate electrode
- Individual control of each transistor to be biased or connected externally
- Each chip comes with multiple transistors of nine different channel dimensions
Technical Specs
| Device Parameters | |
| Back-gate oxide | Thermal SiO2 |
| Back-gate oxide thickness | 300 nm |
| Silicon substrate resistivity | 0.001-0.005 Ω-cm |
| Number of graphene layers | 1 |
| Gate leakage current | <0.5 nA (at VBG = 100V) |
| Channel mobility | 2000-3000 cm2/Vs |
| Contact metal thickness | 40 – 50 nm |
Electrical Characteristic Curves (Room temperature, Ambient)
